| 摘要 |
A semiconductor memory device includes a semiconductor substrate, a first insulation film formed on the substrate, a trench formed in the substrate, an opening formed in the first insulation film above the trench, a capacitor including a dielectric film formed in the trench and a storage node formed in the trench on the dielectric film, a transfer transistor including a channel layer formed in the opening on the storage node, a gate insulation film formed on the channel layer, and a gate electrode formed on the gate insulation film, a second insulation film formed on the gate electrode, a conduction layer formed on the second insulation film, a third insulation film in contact with the channel layer, and a bit line in contact with the conduction layer. |
