发明名称 |
Surface acoustic wave device incorporating single crystal LiNbO3 |
摘要 |
A surface acoustic wave device includes at least diamond, a single crystal LiNbO3 layer formed on the diamond, and an interdigital transducer formed in contact with the LiNbO3 layer and uses a surface acoustic wave (wavelength: lambda n mu m) in an nth-order mode (n=1 or 2). When the thickness of the LiNbO3 layer is t1 ( mu m), kh1=2 pi (t1/ lambda n) and the cut orientation ( theta , PHI , and psi represented by an Eulerian angle representation) with respect to the crystallographic fundamental coordinate system of the LiNbO3 layer are selected from values within specific ranges. Consequently, a surface acoustic wave device which increases the propagation velocity (V) of a surface acoustic wave and improves the electromechanical coupling coefficient (K2) is realized.
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申请公布号 |
US6025636(A) |
申请公布日期 |
2000.02.15 |
申请号 |
US19970951615 |
申请日期 |
1997.10.16 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES LTD. |
发明人 |
NAKAHATA, HIDEAKI;NARITA, MASASHI;HIGAKI, KENJIRO;FUJII, SATOSHI;KITABAYASHI, HIROYUKI;SHIKATA, SHIN-ICHI |
分类号 |
H03H9/02;(IPC1-7):H01L29/82 |
主分类号 |
H03H9/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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