发明名称 |
METHOD FOR SELF-ADJUSTED TUNING OF THYRISTORS WITH SEQUENTIAL TRIGGERING |
摘要 |
The invention relates to a method for self-adjusted tuning of thyristors with sequential triggering and especially thyristors with amplifying gate structures or pilot thyristors. The method for producing high power thyristors enabling optimal triggering propagation even in the case of high di/dt ratings, comprises the following steps: creating defects in the crystal grading of the semiconductor in at least one area (7) of the at least one pilot thyristor and partially regenerating the crystal grading by heating the thyristor structure with an operating current. |
申请公布号 |
WO0025357(A1) |
申请公布日期 |
2000.05.04 |
申请号 |
WO1999DE03260 |
申请日期 |
1999.10.11 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT;SCHULZE, HANS-JOACHIM;RUFF, MARTIN |
发明人 |
SCHULZE, HANS-JOACHIM;RUFF, MARTIN |
分类号 |
H01L21/332;(IPC1-7):H01L21/332;H01L21/265;H01L29/32 |
主分类号 |
H01L21/332 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|