发明名称 Semiconductor memory device including dynamic type memory and static type memory formed on the common chip and an operating method thereof
摘要 A semiconductor memory device which is applicable not only to a cache system but to the field of graphic processing is provided. The semiconductor memory device includes a DRAM portion, an SRAM portion and a bidirectional data transfer circuit 106 which carries out data transfer between a DRAM array included in the DRAM portion and an SRAM array included in the SRAM portion as well as data input/output with the outside of the device. Driving of the DRAM array and data transfer operation between the DRAM array and the bidirectional data transfer circuit are controlled by a DRAM control circuit. Driving of the SRAM array, data transfer between the SRAM array and the bidirectional data transfer circuit, and the data input/output operation are controlled by the SRAM control circuit. The address to the DRAM array is applied to a DRAM array buffer 108, while an address for selecting a memory cell in the SRAM array is applied to the SRAM address buffer.
申请公布号 US6151269(A) 申请公布日期 2000.11.21
申请号 US19980007229 申请日期 1998.01.14
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 DOSAKA, KATSUMI;OMOTO, TOSHIYUKI;KUMANOYA, MASAKI
分类号 G06F12/08;G11C11/00;G11C11/401;G11C11/407;G11C11/409;G11C11/41;(IPC1-7):G11C8/00 主分类号 G06F12/08
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