发明名称 |
Semiconductor memory device including dynamic type memory and static type memory formed on the common chip and an operating method thereof |
摘要 |
A semiconductor memory device which is applicable not only to a cache system but to the field of graphic processing is provided. The semiconductor memory device includes a DRAM portion, an SRAM portion and a bidirectional data transfer circuit 106 which carries out data transfer between a DRAM array included in the DRAM portion and an SRAM array included in the SRAM portion as well as data input/output with the outside of the device. Driving of the DRAM array and data transfer operation between the DRAM array and the bidirectional data transfer circuit are controlled by a DRAM control circuit. Driving of the SRAM array, data transfer between the SRAM array and the bidirectional data transfer circuit, and the data input/output operation are controlled by the SRAM control circuit. The address to the DRAM array is applied to a DRAM array buffer 108, while an address for selecting a memory cell in the SRAM array is applied to the SRAM address buffer.
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申请公布号 |
US6151269(A) |
申请公布日期 |
2000.11.21 |
申请号 |
US19980007229 |
申请日期 |
1998.01.14 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
DOSAKA, KATSUMI;OMOTO, TOSHIYUKI;KUMANOYA, MASAKI |
分类号 |
G06F12/08;G11C11/00;G11C11/401;G11C11/407;G11C11/409;G11C11/41;(IPC1-7):G11C8/00 |
主分类号 |
G06F12/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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