| 摘要 |
A vapor-phase growth apparatus includes: a reaction furnace which is hermetically closable, a wafer container which is disposed in the reaction furnace, for disposing a wafer at a predetermined position, a gas supply member for supplying a source gas toward the wafer, and a heating member for heating the wafer, wherein the apparatus is designed to form a grown film on a front surface of the wafer by supplying the source gas in a high temperature state while the heating member heats the wafer in the reaction furnace through the wafer container. The wafer container includes: a heat flow control section having a space for disposing a wafer; and a heat flow transmitting section joined to the heat flow control section, for transmitting heat to the wafer disposed in the space; and contact heat resistance R<SUB>g </SUB>between the heat flow control section and the heat flow transmitting section is not less than 1.0x10<SUP>-6 </SUP>m<SUP>2</SUP>K/W to not more than 5.0x10<SUP>-3 </SUP>m<SUP>2</SUP>K/W, and the heat flow control section is made of a material having a coefficient of thermal conductivity which is not less than 5 times to not more than 20 times that of the wafer disposed on the heat flow transmitting section.
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