| 摘要 |
A method for fabricating a semiconductor device having a landing plug contact is provided to increase densification of a nitride layer and to improve the quality of the nitride layer by adding a nitride layer annealing process while depositing a nitride layer of a gate spacer. A plurality of gate stacks(14) are formed on a semiconductor substrate(1). A first and second gate spacer nitride layers(18,20) are formed on an entire surface of the semiconductor substrate. An interlayer dielectric is formed between the gate stacks. A first contact hole(23) for a landing plug is formed by patterning the interlayer dielectric. A third gate spacer nitride layer(24) is formed on the second gate spacer nitride layer of the gate stacks. An insulating layer(26) is formed on the third gate spacer nitride layer. The third gate spacer nitride layer is removed by etching the insulating layer, the third, second, and first gate spacer nitride layers. A second contact hole is formed to expose the semiconductor substrate. The landing plug is formed in the second contact hole. The densification of the nitride layer is increased by performing an additional annealing process in order to control the thickness of the first and second gate spacers.
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