发明名称 Fabricating carbon nanotube transistor devices
摘要 During fabrication of single-walled carbon nanotube transistor devices, a porous template with numerous parallel pores is used to hold the single-walled carbon nanotubes. The porous template or porous structure may be anodized aluminum oxide or another material. A gate region may be provided one end or both ends of the porous structure. The gate electrode may be formed and extend into the porous structure. A transistor of the invention may be especially suited for power transistor or power amplifier applications.
申请公布号 US7301191(B1) 申请公布日期 2007.11.27
申请号 US20060466217 申请日期 2006.08.22
申请人 ATOMATE CORPORATION 发明人 TOMBLER THOMAS W.;LIM BRIAN Y.
分类号 H01L27/108;H01L29/76 主分类号 H01L27/108
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