发明名称 |
SHOWERHEAD DESIGN WITH PRECURSOR PRE-MIXING |
摘要 |
A method and apparatus that may be utilized in deposition processes, such as hydride vapor phase epitaxial (HVPE) deposition of metal nitride films, are provided. A first set of passages may introduce a metal containing precursor gas. A second set of passages may provide a nitrogen-containing precursor gas. The first and second sets of passages may be interspersed in an effort to separate the metal containing precursor gas and nitrogen-containing precursor gas until they reach a substrate. An inert gas may also be flowed down through the passages to help keep separation and limit reaction at or near the passages, thereby preventing unwanted deposition on the passages.
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申请公布号 |
US2008314317(A1) |
申请公布日期 |
2008.12.25 |
申请号 |
US20070925630 |
申请日期 |
2007.10.26 |
申请人 |
BURROWS BRIAN H;KRYLIOUK OLGA;MELNIK YURIY;GRAYSON JACOB;NIJHAWAN SANDEEP;STEVENS RONALD;ACHARYA SUMEDH |
发明人 |
BURROWS BRIAN H.;KRYLIOUK OLGA;MELNIK YURIY;GRAYSON JACOB;NIJHAWAN SANDEEP;STEVENS RONALD;ACHARYA SUMEDH |
分类号 |
C23C16/455;G05D23/00 |
主分类号 |
C23C16/455 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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