| 摘要 |
PROBLEM TO BE SOLVED: To improve the breakdown voltage in a semiconductor device including a bipolar transistor. SOLUTION: In the semiconductor device 100 including the bipolar transistor, a base region has a two layer structure including a first base region 114, and a second base region 116 which is provided around the first base region 114 and has a lower impurity density than that of the first base region 114 and has a shallower depth than that of the first base region 114. COPYRIGHT: (C)2009,JPO&INPIT |
