| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor light-emitting device that can reduce the size of the semiconductor light-emitting device while maintaining uniformity in characteristics and yields or can improve uniformity in characteristics and yields without changing the size of the semiconductor light-emitting device. <P>SOLUTION: A plurality of stripes of two first adjacent laminates ST1 are formed side by side, and further stripes of two second adjacent laminates ST2 are formed at a region between the first laminates ST1. More specifically, two stripes of first laminates ST1 and two stripes of second laminates ST2 are formed side by side on a substrate 30. Then, the semiconductor light-emitting device, having the stripes of first laminates ST1 and second laminates ST2, is manufactured by parting the substrate 30 between the stripes of two first adjacent laminates ST1 and between the stripes of two second adjacent laminates ST2. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
