| 发明名称 | Magnetic tunnel junctions | ||
| 摘要 | A magnetic tunnel junction includes a conductive first magnetic electrode that includes magnetic recording material. A conductive second magnetic electrode is spaced from the first electrode and includes magnetic reference material. A non-magnetic tunnel insulator material is between the first and second electrodes. The magnetic reference material of the second electrode includes a non-magnetic region comprising elemental iridium. The magnetic reference material includes a magnetic region comprising elemental cobalt or a cobalt-rich alloy between the non-magnetic region and the tunnel insulator material. | ||
| 申请公布号 | US9373779(B1) | 申请公布日期 | 2016.06.21 |
| 申请号 | US201414563303 | 申请日期 | 2014.12.08 |
| 申请人 | Micron Technology, Inc. | 发明人 | Chen Wei;Kula Witold;Harms Jonathan D.;Murthy Sunil S. |
| 分类号 | H01L43/08;G11B5/39;H01L43/10;H01L43/02;H01L27/115;H01L27/22;B82Y25/00 | 主分类号 | H01L43/08 |
| 代理机构 | Wells St. John, P.S. | 代理人 | Wells St. John, P.S. |
| 主权项 | 1. A magnetic tunnel junction, comprising: a conductive first magnetic electrode comprising magnetic recording material; a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material; a non-magnetic tunnel insulator material between the first and second electrodes; and the magnetic reference material of the second electrode including a non-magnetic region comprising elemental iridium, the magnetic reference material including a magnetic region comprising elemental cobalt or a cobalt-rich alloy between the non-magnetic region and the tunnel insulator material, elemental Ta being between the elemental cobalt or cobalt-rich alloy and the tunnel insulator material, an alloy comprising Co, Fe, and B being between the elemental Ta and the tunnel insulator material. | ||
| 地址 | Boise ID US | ||