| 摘要 |
PROBLEM TO BE SOLVED: To suppress pulling of particles to the periphery of a substrate when applying a DC voltage HV.SOLUTION: A plasma processing method includes a step for carrying a substrate into a chamber where plasma processing is performed, a step for applying a high frequency power for bias having a frequency lower than that of a high frequency power for plasma excitation to a mounting table for mounting a substrate, and a step for applying a DC voltage to an electrostatic chuck attracting the substrate on the mounting table electrostatically. The step for applying a DC voltage is executed after the step for applying a high frequency power for bias.SELECTED DRAWING: Figure 2 |
