发明名称 |
Photoelectrode including zinc oxide hemisphere, method of fabricating the same and dye-sensitized solar cell using the same |
摘要 |
Provided are a photoelectrode including a zinc oxide hemisphere, a method of fabricating the same, and a dye-sensitized solar cell using the same. The photoelectrode includes a conductive substrate, a zinc oxide hemisphere disposed on the conductive substrate, and a porous metal oxide layer covering the zinc oxide hemisphere. Light scattering effects of photoelectrodes can be increased, and recombination losses of electrons can be minimized to improve photovoltaic properties. |
申请公布号 |
US9452929(B2) |
申请公布日期 |
2016.09.27 |
申请号 |
US201213484695 |
申请日期 |
2012.05.31 |
申请人 |
GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
Kim Ki Seok;Nam Sang Hoon;Jeong Hui Su;Song Hui;Kim Sang-Mook;Kim Won Bae;Jung Gun Young |
分类号 |
H01L31/0224;B82Y30/00;B82Y40/00;H01G9/20;B82Y20/00 |
主分类号 |
H01L31/0224 |
代理机构 |
Foley & Lardner LLP |
代理人 |
Foley & Lardner LLP ;Ewing James F. |
主权项 |
1. A photoelectrode comprising:
a conductive substrate; a zinc oxide nano structure pattern comprising a plurality of zinc oxide hemispheres disposed on the conductive substrate; and a porous metal oxide layer covering the zinc oxide nano structure pattern, wherein each of the plurality of zinc oxide hemispheres of the zinc oxide nano structure pattern includes a plurality of zinc oxide nanorods formed radially from a zinc oxide seed layer, wherein each of the plurality of zinc oxide nanorods has a single crystalline structure, and wherein each of the plurality of zinc oxide hemispheres of the zinc oxide nano structure pattern is filled with a zinc oxide material grown laterally from the zinc oxide nanorods to fill each gap between the zinc oxide nanorods. |
地址 |
Buk-Gu KR |