发明名称 Photoelectrode including zinc oxide hemisphere, method of fabricating the same and dye-sensitized solar cell using the same
摘要 Provided are a photoelectrode including a zinc oxide hemisphere, a method of fabricating the same, and a dye-sensitized solar cell using the same. The photoelectrode includes a conductive substrate, a zinc oxide hemisphere disposed on the conductive substrate, and a porous metal oxide layer covering the zinc oxide hemisphere. Light scattering effects of photoelectrodes can be increased, and recombination losses of electrons can be minimized to improve photovoltaic properties.
申请公布号 US9452929(B2) 申请公布日期 2016.09.27
申请号 US201213484695 申请日期 2012.05.31
申请人 GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 Kim Ki Seok;Nam Sang Hoon;Jeong Hui Su;Song Hui;Kim Sang-Mook;Kim Won Bae;Jung Gun Young
分类号 H01L31/0224;B82Y30/00;B82Y40/00;H01G9/20;B82Y20/00 主分类号 H01L31/0224
代理机构 Foley & Lardner LLP 代理人 Foley & Lardner LLP ;Ewing James F.
主权项 1. A photoelectrode comprising: a conductive substrate; a zinc oxide nano structure pattern comprising a plurality of zinc oxide hemispheres disposed on the conductive substrate; and a porous metal oxide layer covering the zinc oxide nano structure pattern, wherein each of the plurality of zinc oxide hemispheres of the zinc oxide nano structure pattern includes a plurality of zinc oxide nanorods formed radially from a zinc oxide seed layer, wherein each of the plurality of zinc oxide nanorods has a single crystalline structure, and wherein each of the plurality of zinc oxide hemispheres of the zinc oxide nano structure pattern is filled with a zinc oxide material grown laterally from the zinc oxide nanorods to fill each gap between the zinc oxide nanorods.
地址 Buk-Gu KR