| 摘要 |
PURPOSE:To improve radiating ability of the device, by forming a pellet- mounting substrate integrally with a heat sink. CONSTITUTION:On the upper periphery of an SiC substrate 1 containing Be of 0.1-3.5wt%, a frame 2 of mullite is mounted through a low melting point glass 3, in which external terminals 4 of kovar are buried fixedly. An Si mother chip 6 having pellets 5 face-to-face bonded is mounted on the substrate 1 with gold paste 7, and pads 8 are connected 9 with the inner ends of the external terminals 4. On the top of the frame 2, a cap 10 of Al2O3 is mounted with low melting point glass 11 to seal hermetically. In this structure, the heat resulted from the pellets can be radiated directly, the radiating ability can be improved, and the manufacturing process can be shortened. |
