| 摘要 |
PURPOSE:To reduce the interface level and deep level of an optical guide layer, to inject carriers effectively and to obtain excellent wavelength control characteristics by constituting the optical guide layer formed into a control region from two or more of semiconductor layers. CONSTITUTION:A diffraction grating 6 is formed partially onto an n-InP substrate 5, and an n-In0.72Ga0.28As0.6P0.39 guide layer 4 corresponding to a luminous wavelength of 1.3mum, a non-doped In0.59Ga0.41As0.90P0.10 active layer 7 corresponding to a luminous wavelength of 1.5mum and a p-InP clad layer 8 are laminated on the diffraction grating in succession. Other sections are removed through etching up to the active layer 7 while leaving only a section as an active region 2. An n-InP layer 10, a second optical guide layer 11 consisting of p-In0.72Ga0.28 As0.61P0.39 corresponding to the luminous wavelength of 1.3mum and the p-InP clad layer 8 are laminated successively with the exception of the active region 2. Grooves 12 for isolating several region are shaped and electrodes are formed through mesa etching and buried growth in a normal process, thus acquiring a desired integrated type DBR-LD. |
