发明名称 |
SILICON WAFER, METHOD FOR MANUFACTURING THE SAME, AND SOI WAFER |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon wafer in which the surface roughness and the overall flatness of a wafer can be prevented from deteriorating, and to provide a silicon wafer manufactured by that method. <P>SOLUTION: The method for manufacturing a silicon wafer comprises a process for lapping with alkaline etching liquid wherein a loose abrasive having a maximum grain size of 21 μm or less and a mean grain size of 8.5 μm or less is employed, and an alkaline aqueous solution having the concentration of an alkaline component not lower than 50 wt.% is employed as the alkaline etching liquid in the etching process. A silicon wafer manufactured by that method is also included. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
申请公布号 |
JP2006222453(A) |
申请公布日期 |
2006.08.24 |
申请号 |
JP20060123015 |
申请日期 |
2006.04.27 |
申请人 |
SHIN ETSU HANDOTAI CO LTD;NAGANO DENSHI KOGYO KK |
发明人 |
IIZUKA NAOTO;NIHONMATSU TAKASHI;YOSHIDA MASAHIKO;MIYAZAKI SEIICHI |
分类号 |
H01L21/304;H01L21/762;B24B37/00;B24B37/04;C09K13/02;C09K13/08;H01L21/02;H01L21/302;H01L21/306;H01L21/308;H01L27/12 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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