发明名称 |
Contact plug forming method |
摘要 |
An inter-level insulation film is formed on a first-level interconnection layer and part of the inter-level insulation film which lies on the first-level interconnection layer is etched to form a contact hole. After a natural oxidation film formed on the surface of part of the first-level interconnection layer which is exposed in the contact hole is removed, the resultant structure is exposed to a gas atmosphere containing halogen to purify the surface of the inter-level insulation film. After this, a contact plug is deposited and formed on the first-level interconnection layer which is exposed in the contact hole by the selective CVD method to fill in the contact hole. A second-level interconnection layer is formed on the inter-level insulation film and the first-level and second-level interconnection layers are electrically connected to each other via the contact plug.
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申请公布号 |
US5607878(A) |
申请公布日期 |
1997.03.04 |
申请号 |
US19950526543 |
申请日期 |
1995.09.12 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
OTSUKA, MARI;KITAKURA, TOMONORI;OTSUKA, KENICHI;MORI, KAZUYA |
分类号 |
H01L21/768;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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