发明名称 APPARATUS AND METHOD FOR FORMING DEPOSITED FILM
摘要 <p>PROBLEM TO BE SOLVED: To downsize and simplify a deposited film forming apparatus to suppress the compsn. ratio variation of a raw material gas fed into electric discharge chambers, by connecting identical raw material gas mixers for distributing and feeding the raw material gas composed of mixed gas species in the same compsn. ratio in the electric discharge chambers. SOLUTION: In forming deposited films having the same compsn. ratio from a raw material gas fed in electric discharge chambers 102-106, identical raw material gas mixers 117-119 mix gas species for forming the deposited film, and the raw material gas having the same compsn. ratio mixed by the mixers 117-119 is distributed and fed into the discharge chambers 102-106. Gas cylinders 109a-113a filled with the raw material gas for forming the deposited film supply the gas in the gas mixers 117-119 through stop valves 109b-113b, pressure reducers 109c-113c and mass flow controllers 114a-114c, 115a-115c, 116a-116c.</p>
申请公布号 JP2000182962(A) 申请公布日期 2000.06.30
申请号 JP19980355727 申请日期 1998.12.15
申请人 CANON INC 发明人 OZAKI HIROYUKI;OTOSHI HIROKAZU;OKADA NAOTO;YOSHISATO SUNAO;MORIYAMA KOUICHIROU;SHIMODA HIROTSUGU;KANAI MASAHIRO
分类号 H01L21/205;C23C16/50;C23C16/505;G03G5/08;H01L31/04;(IPC1-7):H01L21/205 主分类号 H01L21/205
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