METHOD AND APPARATUS FOR FORMING DEPOSITED FILM

摘要

PROBLEM TO BE SOLVED: To form a deposited film having a compsn. distribution in the thickness direction without variation on a wide-area substrate, by activating means for applying a subsidiary power to generate a plasma for forming an i-type semiconductor layer by the applying means at a reactor chamber for forming a p-type semiconductor layer rather than main power applying means. SOLUTION: An i-type semiconductor layer is formed using a main and subsidiary powers. Means for applying the subsidiary power in a reactor chamber rather performs power supply for forming a p-type semiconductor layer than a main power applying means. In an i-layer film forming vacuum chamber 603 a VHF power for mainly generating a plasma is fed through a VHF power rod 629, the subsidiary power, i.e., a d-c power is applied to a subsidiary electrode 630, the VHF electrode rod 629 is disposed at the middle of a substrate carrying path in the vacuum chamber 603, and the subsidiary electrode 630 is disposed nearer a p-layer forming vacuum chamber 604 in the substrate carrying direction.