| 摘要 |
PURPOSE: A method for forming a gate electrode of a semiconductor device is provided to enhance a reliability of a fabrication process simultaneously raising a resistance characteristic of an element, and simplify a fabrication process by performing a tungsten-silicide fabrication for making a good adhesive force between a hard mask and a tungsten-silicide layer. CONSTITUTION: In a method for forming a gate electrode(G) of a semiconductor device using a hard mask(112), a gate insulating layer(104), a doped polysilicon layer(106) and a tungsten-silicide layer(108) are sequentially formed on a semiconductor substrate(100). A tungsten-nitride layer(110) is formed on the tungsten-silicide layer by using a high frequency N+ plasma process. The hard mask layer made of an insulator is formed on the tungsten-nitride layer. A photolithography process using the gate mask is performed to self-align the stacked hard mask layer, the tungsten-nitride layer, the tungsten-silicide layer, and the doped polysilicon layer, thereby forming a pattern of a gate electrode.
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