| 摘要 |
PURPOSE: A method for forming a transistor of a semiconductor device is provided to solve various problems in an ion implantation process, to omit the growth of an additional spacer oxide layer, and to stably form the transistor having a shallow junction layer. CONSTITUTION: A gate oxide layer(120), a polysilicon layer(130) and a tungsten silicide layer(140) are grown in sequence on a semiconductor substrate(110) and then patterned to form a gate electrode. After a cleaning process, a polysilicon layer doped with phosphorus is deposited and then oxidized in a high temperature to form an oxide layer therefrom. In addition, phosphorus doped in the polysilicon layer is diffused into the substrate(110) to form lightly doped drain(LDD) regions. The oxide layer is then subjected to a blanket etching process to form sidewall spacers(152) around the gate electrode. Thereafter, impurities are implanted into source/drain regions(160).
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