METHOD FOR MANUFACTURING CAPACITOR HAVING TAON THIN FILM

摘要

PURPOSE: A method of manufacturing a capacitor provided having a TaON thin film is to improve an electrical property by using O3 in the manufacturing process. CONSTITUTION: An interlayer dielectric(20) is formed on the semiconductor substrate(10) having a semiconductor device. The contact hole of the interlayer dielectric(20) connects the semiconductor device to a bottom electrode. A high dielectric TaON thin film is deposited on the bottom electrode(30) by using Ta chemical vapor and reactive gas O3 and NH. In the deposition process to form the TaON thin film, The conventional Ta(OC2H5)5 uses as a source of Ta2O5 and Reactive gases, NH3 and O3 are added in the Ta(OC2H5)5. The O3 gas reacts to carbon of the Ta(OC2H5)5 more than O2 gas and the O3 reacts quickly the carbon to exhaust CO2 gas and prevent an oxygen shortage in the TaON thin film. Therefore, the property of leakage current improves.