METHOD FOR CRYSTALLIZING SILICON THIN FILM AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method for improving significantly electric characteristics such as electronic mobility, a leakage current or the like of a thin film transistor by a metal induced lateral crystallization(MILC) method. SOLUTION: An amorphous silicon layer is patterned to form a filtering channel 63 for connecting an active layer region containing a crystallization source region 60, a source region 64, a channel region under a gate electrode 65, and a drain region 66. Crystallized crystal particles pass from a region 61 where an MIC source metal of the crystallization source region 60 is deposited by a heat treatment through the filtering channel 63 to crystallize an active layer region. A crystal filtering technique of the present method is applied to create various thin film transistors.