| 摘要 |
<p>PROBLEM TO BE SOLVED: To solve the problem that a method performed by irradiating laser beams is mentioned as a method for crystallizing a semiconductor film, but when laser beams are irradiated on the semiconductor film, the semiconductor film is instantaneously melted and partly expanded, or as a temperature gradient of a substrate and the semiconductor film is steep, the semiconductor film is distorted and the quality of the resulting crystalline semiconductor film is reduced. SOLUTION: After being crystallized with laser beams with respect to a semiconductor film, the semiconductor film is heated by a heat treatment, so that a distortion of the semiconductor film is decreased. Irradiation with the laser beams causes partial heating, while the heat treatment wholly heats the substrate and the semiconductor film. Thus, a distortion formed in the semiconductor film is decreased and physical properties of the semiconductor film can be raised.</p> |
