| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser-excited 1.65-μm band amplifier. SOLUTION: The laser amplifier is constituted of a first excitation light source 3 which generates a laser 4 at a corresponding wavelength between an upper level<4> S3/2 forming a self-termination system and a lower level, and a second excitation light source 1 used to generate a laser 2 which supplies energy to upper levels<2> H11/2 ,<4> F7/2 in the higher order than the upper level<4> S3/2 . The laser 4 and the laser 2 are introduced to an amplification medium main line 10 through which signal light 8 to be amplified is passed. The laser 4 whose transition from an external system is forced to the lower level from the upper level is introduced to the self-termination system in which lives of ions in the lower level are shorter than their life in the upper level and whose transition to the lower level from the upper level is delayed, and the ions which are delayed in the lower level are transited forcibly to the lower level. When their transition to the upward direction is forced, an enormous number of spaces are generated in the lower level, and an induced discharge by which the ions are transited to the lower level from the upper levels<2> H11/2 ,<4> F7/2 at the slightly higher order than the upper level and which is used to supply energy is induced forcibly. |
