Sputtering method utilizing an extended plasma region

摘要

A target and magnetron for a plasma sputter reactor and the associated sputtering method provided by the extended magnetic fields and plasma regions. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault, some of which may rotate along the vault, create a magnetic field in the vault to support a plasma extending over a large volume of the vault from its top to its bottom. The large plasma volume increases the probability that the sputtered metal atoms will become ionized and be accelerated towards an electrically biased wafer support electrode.