| 摘要 |
<p>A method for manufacturing a flash memory device is provided to develop retention property of a cell by improving a program threshold voltage of the cell. A method for manufacturing a flash memory device includes the steps of: forming an insulation layer for a hard mask on a semiconductor substrate(100); forming a projected device isolation layer(106) by filling a trench(105) as the insulation layer after forming the trench by etching a device isolation region of a semiconductor substrate, wherein the device isolation region is etched by using the insulation layer for the hard mask; forming a protective layer on the insulation layer for the hard mask including the device isolation layer; removing a protective insulation layer and the insulation layer for the hard mask by etching; forming a tunnel insulation layer(108), an electric charge storing layer, and a buffer insulation layer orderly on the semiconductor substrate; and remaining the tunnel insulation layer, the electric charge storing layer(109), and the buffer insulation layer on an active area of the substrate.</p> |
