发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 A method for manufacturing a semiconductor device which includes fine patterns having various critical dimensions (CDs) by adjusting a thickness of spacer used as an etching mask in Spacer Patterning Technology (SPT). The method for manufacturing a semiconductor device includes forming spacers at a different level over an etching target layer and etching the etching target layer exposed among the spacers.
申请公布号 US2009026584(A1) 申请公布日期 2009.01.29
申请号 US20080134041 申请日期 2008.06.05
申请人 CHANG DONG SOOK;YUNE HYOUNG SOON 发明人 CHANG DONG SOOK;YUNE HYOUNG SOON
分类号 H01L29/06;H01L21/311 主分类号 H01L29/06
代理机构 代理人
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