发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A method for manufacturing a semiconductor device which includes fine patterns having various critical dimensions (CDs) by adjusting a thickness of spacer used as an etching mask in Spacer Patterning Technology (SPT). The method for manufacturing a semiconductor device includes forming spacers at a different level over an etching target layer and etching the etching target layer exposed among the spacers.
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申请公布号 |
US2009026584(A1) |
申请公布日期 |
2009.01.29 |
申请号 |
US20080134041 |
申请日期 |
2008.06.05 |
申请人 |
CHANG DONG SOOK;YUNE HYOUNG SOON |
发明人 |
CHANG DONG SOOK;YUNE HYOUNG SOON |
分类号 |
H01L29/06;H01L21/311 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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