发明名称 |
Nitride semiconductor light-emitting element |
摘要 |
A nitride semiconductor light-emitting element 11 is one for generating light containing a wavelength component in an ultraviolet region. The nitride semiconductor light-emitting element 11 has an active region 17 including InX1AlY1Ga1-X1-Y1N well layers 13 (1>X1>0 and 1>Y1>0) and InX2AlY2Ga1-X2-Y2N barrier layers 15 (1>X2>0 and 1>Y2>0). An energy gap difference Eg1 between the InX1AlY1Ga1-X1-Y1N well layers 13 and the InX2AlY2Ga1-X2-Y2N barrier layers 15 is not less than 2.4x10-20 J nor more than 4.8x10-20 J.
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申请公布号 |
US2009026440(A1) |
申请公布日期 |
2009.01.29 |
申请号 |
US20060659002 |
申请日期 |
2006.04.25 |
申请人 |
KYONO TAKASHI;AKITA KATSUSHI;HIRAYAMA HIDEKI |
发明人 |
KYONO TAKASHI;AKITA KATSUSHI;HIRAYAMA HIDEKI |
分类号 |
H01L33/06;H01L33/32 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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