发明名称 |
Ferroelectric capacitor and its manufacturing method and ferroelectric memory device |
摘要 |
A method for manufacturing a ferroelectric capacitor includes steps of: (a) forming a first crystalline barrier layer; (b) forming a second crystalline barrier layer composed of nitride by nitriding the first crystalline barrier layer; (c) forming a first electrode above the second crystalline barrier layer; (d) forming a ferroelectric film on the first electrode; and (e) forming a second electrode on the ferroelectric film.
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申请公布号 |
US7547629(B2) |
申请公布日期 |
2009.06.16 |
申请号 |
US20060459742 |
申请日期 |
2006.07.25 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
TAMURA HIROAKI;MITSUI HIROYUKI;SAWASAKI TATSUO |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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