| 摘要 |
PROBLEM TO BE SOLVED: To improve mechanical strength of an Al alloy electrode formed on a semiconductor substrate to inhibit an increase in strain amplitude of the Al alloy electrode when the semiconductor device is used under a higher-temperature condition than in the past.SOLUTION: A semiconductor device comprises a semiconductor substrate and an electrode composed of an aluminum-silicon-and-titanium-containing alloy. A content of silicon contained in the electrode is within a range of 0.5-1.0 wt.% to a total dose of the electrode; and a content of titanium contained in the electrode is within a range of 0.8-3.0 wt.% with respect to the total dose of the electrode; and a film thickness of the electrode is equal to or larger than 1 μm.SELECTED DRAWING: Figure 1 |
