发明名称 Proximity effect correction in a charged particle lithography system.
摘要 The invention relates to a method for performing charged particle beam proximity effect correction, comprising the steps of: receiving a digital layout pattern to be patterned onto a target using one or more charged particle beams; selecting a base proximity function comprising a sum of an alpha and a beta proximity function, wherein said alpha proximity function models a short range proximity effect and said beta proximity function models a long range proximity effect, wherein a constant ƞ is defined as a ratio between the beta proximity function and the alpha proximity function in said sum, with 0 < ƞ <1; determining a modified proximity function which corresponds to said base proximity effect function wherein the alpha proximity function has been replaced by a Dirac delta function, and using an electronic processor, performing a deconvolution of the digital layout pattern with the modified proximity function to produce a corrected layout pattern.
申请公布号 NL2014314(B1) 申请公布日期 2016.07.19
申请号 NL20152014314 申请日期 2015.02.19
申请人 MAPPER LITHOGRAPHY IP B.V. 发明人 MARCO JAN-JACO WIELAND
分类号 H01J37/317 主分类号 H01J37/317
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