METHOD FOR MANUFACTURING PHOTOMASK BLANK, PHOTOMASK BLANK, METHOD FOR MANUFACTURING PHOTOMASK, AND PHOTOMASK

摘要

PROBLEM TO BE SOLVED: To suppress precipitation of ammonium sulfate in a photomask upon irradiation with high energy exposure light such as ArF excimer laser light, and to suppress changes in a pattern dimension by a cleaning process.

SOLUTION: A top face and a side face of a light semitransmitting film 2 comprising a material containing at least silicon atoms and nitrogen atoms deposited on a transparent substrate 3 is subjected to a contact process with silylation agent and a subsequent oxidation process to form a modified layer 5 in the manufacturing process of a photomask.

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