SEMICONDUCTOR DEVICES HAVING A TAPERED ACTIVE REGION

摘要

The present invention provides a semiconductor device having a tapered active region, capable of providing a metal oxide field effect transistor (MOFET) semiconductor device with reduced band-to-band tunneling. According to the present invention, a fin field effect transistor (finFET) device comprises: an active region projecting from a substrate, and including a central channel region, a drain region arranged on one side surface of the channel region, and a source region arranged on the other side surface of the channel region; a gate insulation layer formed on two facing side surfaces of the channel region and having a U-shaped cross section; gate spacers formed on an outer surface of the gate insulation layer; drain spacers formed on two facing side surfaces of the drain region; and source spacers formed on two facing side surfaces of the source region. At least one of two side surfaces of the drain region has a tapered part.