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发明名称
制造具有贯穿介层连接的双侧绝缘层上矽晶圆尺寸封装之装置及方法
摘要
本发明揭示一种半导体封装,其包含SOI晶圆,该晶圆具有包含积体电路系统的第一侧,以及在第一侧对面形成至少一腔室的第二侧。将至少一晶片或组件置于腔室中。埋式氧化物介层将晶片连接至积体电路系统。
申请公布号
TW200634946
申请公布日期
2006.10.01
申请号
TW094139868
申请日期
2005.11.14
申请人
万国商业机器公司
发明人
陈厚;许履尘
分类号
H01L21/56
主分类号
H01L21/56
代理机构
代理人
蔡玉玲
主权项
地址
美国
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