VIA FORMATION USING SIDEWALL IMAGE TRANSFER PROCESS TO DEFINE LATERAL DIMENSION

摘要

A method of forming a via to an underlying layer of a semiconductor device is provided. The method may include forming a pillar over the underlying layer using a sidewall image transfer process. A dielectric layer is formed over the pillar and the underlying layer; and a via mask patterned over the dielectric layer, the via mask having a mask opening at least partially overlapping the pillar. A via opening is etched in the dielectric layer using the via mask, the mask opening defining a first lateral dimension of the via opening in a first direction and the pillar defining a second lateral dimension of the via opening in a second direction different than the first direction. The via opening is filled with a conductor to form the via. A semiconductor device and via structure are also provided.

主权项

1. A method of forming a via to an underlying layer of a semiconductor device, the method comprising the steps of:
forming a pillar over the underlying layer using a sidewall image transfer process; forming a dielectric layer over the pillar and the underlying layer; patterning a via mask over the dielectric layer, the via mask having a mask opening at least partially overlapping the pillar; etching a via opening in the dielectric layer using the via mask, the mask opening defining a first lateral dimension of the via opening in a first direction and the pillar defining a second lateral dimension of the via opening in a second direction different than the first direction; and filling the via opening with a conductor to form the via.