Multiple Directed Self-Assembly Patterning Process

摘要

Disclosed is a method of forming a target pattern for a semiconductor device using multiple directed self-assembly (DSA) patterning processes. The method includes receiving a substrate and forming a guide pattern over the substrate by performing a process that includes a first DSA process. The method further includes performing a second DSA process over the substrate using the guide pattern. In an embodiment, the first DSA process controls the first pitch of a dense pattern in a first direction and the second DSA process controls the second pitch of the dense pattern in a second direction.

主权项

1. A method of forming a target pattern for a semiconductor device, comprising:
receiving a substrate; forming a guide pattern over the substrate by performing a process that includes a first directed self-assembly (DSA) process, wherein the first DSA process results in a first copolymer layer over the substrate, the first copolymer layer includes a first constituent polymer and a second constituent polymer, and the guide pattern corresponds to the first constituent polymer; and performing a second DSA process over the substrate using the guide pattern.