METHOD AND STRUCTURE FOR FORMING A DENSE ARRAY OF SINGLE CRYSTALLINE SEMICONDUCTOR NANOCRYSTALS

摘要

A dense array of semiconductor single crystalline semiconductor nanocrystals is provided in the present application by forming an amorphous semiconductor material layer surrounding a plurality of patterned nanostructures comprised of a single crystalline semiconductor material portion. A thermal anneal, i.e., (solid phase epitaxy), is then performed to crystallize a portion of the amorphous semiconductor material layer that is in contact with each single crystalline semiconductor material portion and to provide a plurality of spaced apart single crystalline nanocrystals on a surface of an insulator. A remaining portion of the amorphous semiconductor material layer that was not crystallized is thereafter removed.

主权项

1. A method of forming a semiconductor structure, said method comprising:
forming a plurality of single crystalline semiconductor material portions on an insulator layer; forming an amorphous semiconductor material layer on exposed surfaces of each single crystalline semiconductor material portion; performing a thermal anneal to crystallize a portion of said amorphous semiconductor material layer that is in contact with said exposed surfaces of each single crystalline semiconductor material portion and to provide a plurality of single crystalline semiconductor nanocrystals; and removing a remaining non-crystallized portion of said amorphous semiconductor material layer.