METHOD AND APPARATUS FOR FORMING OXIDE THIN FILM

摘要

Disclosed is a method for forming an oxide thin film on a solid substrate, the method including the steps of placing a solid substrate s a in a reaction container 1, maintaining the solid substrate at a temperature of higher than 0° C. and 150° C. or lower, and filling the reaction container with an organometallic gas containing tetrakis(ethylmethylamino)hafnium or tetrakis(ethylmethylamino)zirconium; discharging the organometallic gas from the reaction container or filling the reaction container with an inert gas; treating a gas containing oxygen and water vapor with plasma, to thereby generate a plasma gas containing excited oxygen and water vapor, and feeding the plasma gas into the reaction container; and discharging the plasma gas from the reaction container or filling the reaction container with an inert gas; and repeating the series of steps.

主权项

1. A method for forming an oxide thin film on a solid substrate, characterized in that the method comprises a series of steps of:
placing the solid substrate in a reaction container, maintaining the solid substrate at a temperature of higher than 0° C. and 150° C. or lower, and filling the reaction container with an organometallic gas containing tetrakis(ethylmethylamino)hafnium or tetrakis(ethylmethylamino)zirconium; discharging the organometallic gas from the reaction container or filling the reaction container with an inert gas; treating a gas containing oxygen and water vapor with plasma, to thereby generate a plasma gas containing excited oxygen and water vapor, and feeding the plasma gas into the reaction container; and discharging the plasma gas from the reaction container or filling the reaction container with an inert gas; and repeating the series of steps.