| 发明名称 | Low degradation MRAM encapsulation process using silicon-rich silicon nitride film | ||
| 摘要 | A method of making a magnetic random access memory (MRAM) device comprising forming a magnetic tunnel junction on an electrode, the magnetic tunnel junction comprising a first reference layer, a free layer, and a first tunnel barrier layer; and depositing an encapsulating silicon nitride film on and along sidewalls of the magnetic tunnel junction; wherein the silicon nitride film has a N:Si ratio from 0.1 to 1. An MRAM device made by the above method is also disclosed. | ||
| 申请公布号 | US9515252(B1) | 申请公布日期 | 2016.12.06 |
| 申请号 | US201514983015 | 申请日期 | 2015.12.29 |
| 申请人 | INTERNATIONAL BUSINESS MACHINES CORPORATION;SAMSUNG ELECTRONICS CO., LTD. | 发明人 | Annunziata Anthony J.;Kothandaraman Chandrasekaran;Lauer Gen P.;Lee JungHyuk;Marchack Nathan P.;Neumayer Deborah A.;O'Sullivan Eugene J.;Park Jeong-Heon |
| 分类号 | H01L27/00;H01L43/08;H01L43/12;H01L43/02;G11C11/16;H01L27/22 | 主分类号 | H01L27/00 |
| 代理机构 | Cantor Colburn LLP | 代理人 | Cantor Colburn LLP ;Alexanian Vazken |
| 主权项 | 1. A method of making a magnetic random access memory (MRAM) device, the method comprising: forming a magnetic tunnel junction on an electrode, the magnetic tunnel junction comprising a first reference layer, a free layer, and a first tunnel barrier layer; and depositing an encapsulating silicon nitride film on and along sidewalls of the magnetic tunnel junction; wherein the silicon nitride film has a N:Si ratio from 0.1 to 1. | ||
| 地址 | Armonk NY US | ||