Backside contact to final substrate

摘要

Device structures and fabrication methods for a backside contact to a final substrate An electrically-conducting connection is formed that extends through a device layer of a silicon-on-insulator substrate and partially through a buried insulator layer of the silicon-on-insulator substrate. After the electrically-conducting connection is formed, a handle wafer of the silicon-on-insulator substrate is removed. After the handle wafer is removed, the buried insulator layer is partially removed to expose the electrically-conducting connection. After the buried insulator layer is partially removed, a final substrate is coupled to the buried insulator layer such that the electrically-conducting connection is coupled with the final substrate.

主权项

1. A device structure formed using a silicon-on-insulator substrate, the device structure comprising:
a device layer of the silicon-on-insulator substrate; a buried insulator layer of the silicon-on-insulator substrate, the buried insulator layer having a first surface in contact with the device layer and a second surface; a substrate; a trap-rich layer on the second surface of the buried insulator layer, the trap-rich layer between the substrate and the buried insulator layer; and an electrically-conducting connection located in a trench extending from the device layer through the buried insulator lay to the trap-rich layer such that the electrically-conducting connection is coupled with the substrate, the electrically-conducting connection at least partially comprised of trap-rich material.