| 摘要 |
A flip chip light emitting diode die ( 10, 10', 10 '') includes a light-transmissive substrate ( 12, 12', 12 '') and semiconductor layers ( 14, 14', 14 '') that are selectively patterned to define a device mesa ( 30, 30', 30 ''). A reflective electrode ( 34, 34', 34 '') is disposed on the device mesa ( 30, 30', 30 ''). The reflective electrode ( 34, 34', 34 '') includes a light-transmissive insulating grid ( 42, 42', 60, 80 ) disposed over the device mesa ( 30, 30', 30 ''), an ohmic material ( 44, 44', 44'', 62 ) disposed at openings of the insulating grid ( 42, 42', 60, 80 ) and making ohmic contact with the device mesa ( 30, 30', 30 ''), and an electrically conductive reflective film ( 46, 46', 46 '') disposed over the insulating grid ( 42, 42', 60, 80 ) and the ohmic material ( 44, 44', 44'', 62 ). The electrically conductive reflective film ( 46, 46', 46 '') electrically communicates with the ohmic material ( 44, 44', 44'', 62 ).
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