发明名称 Semiconductor memory apparatus
摘要 A semiconductor memory apparatus of the present invention comprises a semiconductor memory circuit and a test mode control circuit, the test mode control circuit sets a source voltage to a second voltage, which is larger than a first voltage used at the time of the normal operation, and controls the semiconductor memory circuit to be set to a predetermined voltage stress test mode by inputting a combination clock signal of clock signals unused at the time of the normal operation.
申请公布号 US5373472(A) 申请公布日期 1994.12.13
申请号 US19930065363 申请日期 1993.05.24
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 OHSAWA, TAKASHI
分类号 G11C11/401;G01R31/28;G01R31/3185;G11C29/00;G11C29/14;G11C29/46;G11C29/50;(IPC1-7):G11C7/00 主分类号 G11C11/401
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