| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor sensor and its manufacturing method capable of easing thermal stress generated on a beam by difference of a thermal expansion coefficient of the beam and a metallic wire, and capable of preventing deformation of the beam in the semiconductor sensor. <P>SOLUTION: The semiconductor sensor 1 is provided with an operation plate 16, a plurality of the flexible beams 19a and 19b arranged so as to connect the operation plate 16 and a silicon frame 21 provided outside while keeping a predetermined interval wherein a part thereof works as piezoresistive elements 30a, 30b and 30c, and an aluminum wire 33 formed on an upper main surface of the beams 19a and 19b so as to connect the piezoresistive elements 30a, 30b and 30c. A thermal stress easing section 71 for easing the thermal stress generated on the beams 19a and 19b by the difference of the thermal expansion coefficient of the aluminum wire 33 and the beams 19a and 19b and a temperature of the usage environment is provided on a lower main surface side of the beams 19a and 19b. <P>COPYRIGHT: (C)2007,JPO&INPIT |
