发明名称 Manufacturing method of semiconductor device
摘要 When the occurrence of the bowing is controlled through the etching conditions, a change in etching conditions causes the bowing. Another problem is a requirement of the larger-sized apparatus for the substrate with a larger diameter in order to allow a whole substrate being subjected equally to the conditions under which no bowing occurs. In the present invention, a first etching is stopped at a depth where no bowing occurs to form an opening section. Next, a protective film for etching is formed on a region of the wall surface of the hole in the opening section where a bowing is liable to appear when an opening is formed further. After that, a second etching is carried out to form an opening further, and thereby a minute opening with an aspect ratio of 13 or higher is made, while suppressing the occurrence of the bowing well.
申请公布号 US7122463(B2) 申请公布日期 2006.10.17
申请号 US20040834247 申请日期 2004.04.29
申请人 ELPIDA MEMORY, INC. 发明人 OHUCHI MASAHIKO
分类号 H01L21/3065;H01L21/4763;H01L21/308;H01L21/311;H01L21/768;H01L23/522 主分类号 H01L21/3065
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