发明名称 Method for controlling semiconductor element and circuit arrangement monitors rate of change of semiconductor temperature
摘要 A temperature sensor (TS) is located very close to the semiconductor (T), e.g. integrated in the semiconductor body. The temperature signal (Tj) is processed in a differentiator (DIF) to determine its rate of change (DTj). This value is then compared in a comparator (K1) with a reference rate of change (Uref) to determine whether temperature conditions are present which indicate that a safe junction temperature is likely to be exceeded, in which case a signal (KS) is sent to the semiconductor controller (1) to turn off the semiconductor .
申请公布号 DE10121881(A1) 申请公布日期 2002.11.14
申请号 DE20011021881 申请日期 2001.05.05
申请人 INFINEON TECHNOLOGIES AG 发明人 ARNDT, CHRISTIAN
分类号 H03K17/08;H03K17/082;(IPC1-7):H03K17/081;H02H5/04 主分类号 H03K17/08
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