| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor laser which has an oscillation wavelength in a band of 0.6-1.1μm, suppresses the optical damage to provide high power oscillation and is easy to manufacture. SOLUTION: The semiconductor laser having an n-InGaP clad layer 2, an i-InGaAsP barrier layer 3, an i-InGaAs quantum well active layer 4, an i- InGaAsP barrier layer 5 and a p-InGaP clad layer 8 all formed on an n-GaAs substrate 1 comprises a p-InGaAsP block layer 6 and an n-InGaAsP block layer 7 at both sides of a stripe region forming an optical waveguide. The quantum well active layer 4 is made thinner near the element end face than the thickness near the element center.
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