发明名称 METHOD FOR MANUFACTURING THIN FILM TRANSISTOR AND ELECTRON DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a device which has sufficient resolution on a big screen or also a flexible substrate. SOLUTION: This method comprises the steps of: forming a first insulating layer on a substrate; forming a first film on the insulator using printing technique; and removing a predetermined portion of the insulator by using the fist film as a mask, using photographic exposure technique or etching technique. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007103947(A) 申请公布日期 2007.04.19
申请号 JP20060272643 申请日期 2006.10.04
申请人 SEIKO EPSON CORP 发明人 LI SHUNPU;NEWSOME CHRISTOPHER;RUSSEL DAVID;KUGLER THOMAS
分类号 H01L21/336;H01L21/288;H01L29/417;H01L29/786;H01L51/05 主分类号 H01L21/336
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