IMAGE SENSOR AND METHOD OF FABRICATING THE SAME

摘要

An image sensor and a manufacturing method thereof are provided to transfer the electrons of photoelectric transforming portion to the charge-detecting portion by unifying the transition speed of the electrons. An image sensor comprises a semiconductor substrate(101), a photoelectron transform portion, a charge transport unit(130), and an electric charge detection part. The photoelectron transform portion, the charge transport unit and the electric charge detection part are arranged along the one-way of the semiconductor substrate. The charge transport unit has a gate insulating layer(134) and a gate electrode(136) which successively are integrated on the semiconductor substrate.