发明名称 |
ARCHITECTURE OF MEMORY CELL ARRAY, NON-VOLATILE MEMORY DEVICE HAVING THE SAME, AND METHOD OF CONSTRUCTING A MEMORY CELL ARRAY |
摘要 |
A memory cell array, a non volatile memory device including the same, and a constructing method of a memory cell array are provided to improve a coupling property and to reduce a power noise. A memory bank has a plurality of logic sectors. A memory cell array is composed of a plurality of rows. A plurality of sub memory banks(B1L~B4L,B1R~B4R) has a plurality of physical sectors composed of the logic sectors. A plurality of sensing amplifier(SA1L~SA4L) is an exclusive sensing amplifier for each sub memory bank. The memory bank is formed by assembling the sub memory banks. A data recorded in the sub memory banks making a first memory bank is buffered by a different recording buffer in case a data is recorded in the first memory bank.
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申请公布号 |
KR20090022315(A) |
申请公布日期 |
2009.03.04 |
申请号 |
KR20070087576 |
申请日期 |
2007.08.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO, JI HO |
分类号 |
G11C16/28;G11C16/26 |
主分类号 |
G11C16/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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